(Hong Kong)
Product Summary
The STS7C4F30L is a Power MOSFET. The STS7C4F30L is the latest development of STMicroelectronis unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Parametrics
STS7C4F30L absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 30 V; (2)VDGR Drain-gate Voltage (RGS = 20 kW): 30 V; (3)VGS Gate- source Voltage: ± 20 V; (4)ID Drain Current (continuos)at TC = 25℃ Single Operating: 4 A; (5)ID Drain Current (continuos)at TC = 100℃ Single Operating: 2.5 A; (6)IDM(·)Drain Current (pulsed): 16 A; (7)Ptot Total Dissipation at TC = 25℃ Dual Operating Total Dissipation at TC = 25℃ Single Operating: 2 W; (8)Tstg Storage Temperature: -60 to 150 ℃; (9)Tj Max. Operating Junction Temperature: 150 ℃.
Features
STS7C4F30L features: (1)typical RDS(on)(N-Channel)= 0.018 W; (2)typical RDS(on)(P-Channel)= 0.070 W; (3)standard outline for easy automated surface mount assembly; (4)LOW THRESHOLD DRIVE.
Diagrams
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 STS7C4F30L |
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MOSFET N+P 30V 4/7A 8-SOIC |
Data Sheet |
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STS700 |
Other |
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Data Sheet |
Negotiable |
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STS733 |
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Data Sheet |
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STS750 |
Other |
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Data Sheet |
Negotiable |
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STS7C4F30L |
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MOSFET N+P 30V 4/7A 8-SOIC |
Data Sheet |
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STS7DNF30L |
Other |
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Data Sheet |
Negotiable |
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STS7NF30L |
STMicroelectronics |
MOSFET N-Ch 30 Volt 7 Amp |
Data Sheet |
Negotiable |
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