S29AL016J70TFI020

16 Mbit, 3.0 Volt-only Flash memory, 48-ball Fine-pitch BGA (0.8 mm pitch), 64-ball Fortified BGA (1.0 mm pitch), 48-pin TSOP packages, standard EPROM programmer

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Price:: US $1.00~3.00 / piece [Get Latest Price]

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PartNumber:: S29AL016J70TFI020

Brand:: SPANSION - spansion | Pack: TSSOP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2011-03-18

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Part Number:S29AL016J70TFI020
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Product Summary

The S29AL016J70TFI020 is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball Fine-pitch BGA (0.8 mm pitch), 64-ball Fortified BGA (1.0 mm pitch) and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. The device can also be programmed in standard EPROM programmers. It offers access time of 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The S29AL016J70TFI020 requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The S29AL016J70TFI020 is entirely command set compatible with the JEDEC single-power-supply Flash standard.

Parametrics

Absolute maximum ratings: (1)Storage Temperature Plastic Packages: –65° C to +150°C; (2)Ambient Temperature with Power Applied: –65° C to +125°C; (3)Voltage with Respect to Ground VCC:–0.5 V to +4.0 V; (4)A9, OE#, and RESET# :–0.5 V to +12.5 V; (5)All other pins: –0.5 V to VCC+0.5 V; (6)Output Short Circuit Current: 200 mA.

Features

Distinctive characteristics: (1)Single Power Supply Operation:Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications; (2)Manufactured on 110 nm Process Technology:Fully compatible with 200 nm S29AL016D; (3)High Performance:– Access times as fast as 55 ns; Extended temperature range (–40°C to +125°C); (4)Ultra Low Power Consumption (typical values at 5 MHz):0.2 μA Automatic Sleep mode current; 0.2 μA standby mode current; 7 mA read current; 20 mA program/erase current; (5)Cycling Endurance: 1,000,000 cycles per sector typical; (6)Data Retention: 20 years typical.