(Hong Kong)
Product Summary
The SI7716ADN-T1-GE3 is an N-Channel 30-V (D-S) MOSFET.
Parametrics
SI7716ADN-T1-GE3 absolute maximum ratings: : (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ± 20V; (3)Continuous Drain Current (TJ = 150 ℃)TC = 25 ℃ ID: 16A; (4)Pulsed Drain Current IDM: 32A; (5)Avalanche Current L = 0.1 mH IAS: 15A; (6)Avalanche Energy EAS: 11.25 mJ; (7)Continuous Source-Drain Diode Current TC = 25 ℃ IS: 16 A; (8)Maximum Power Dissipation TC = 25 ℃ PD: 27.7 W; (9)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150 ℃; (10)Soldering Recommendations (Peak Temperature): 260℃.
Features
SI7716ADN-T1-GE3 features: (1)Halogen-free; (2)TrenchFET® Gen III Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SI7716ADN-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 16A 27.7W 13.5mohm @ 10V |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Data Sheet |
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Data Sheet |
Negotiable |
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SI7703EDN-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 6.3A 2.8W |
Data Sheet |
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SI7703EDN-T1-GE3 |
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MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V |
Data Sheet |
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Si7705DN |
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Data Sheet |
Negotiable |
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SI7705DN-T1 |
Vishay/Siliconix |
MOSFET 20V 6.3A 2.8W |
Data Sheet |
Negotiable |
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