Product Summary

The SI7716ADN-T1-GE3 is an N-Channel 30-V (D-S) MOSFET.

Parametrics

SI7716ADN-T1-GE3 absolute maximum ratings: : (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ± 20V; (3)Continuous Drain Current (TJ = 150 ℃)TC = 25 ℃ ID: 16A; (4)Pulsed Drain Current IDM: 32A; (5)Avalanche Current L = 0.1 mH IAS: 15A; (6)Avalanche Energy EAS: 11.25 mJ; (7)Continuous Source-Drain Diode Current TC = 25 ℃ IS: 16 A; (8)Maximum Power Dissipation TC = 25 ℃ PD: 27.7 W; (9)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150 ℃; (10)Soldering Recommendations (Peak Temperature): 260℃.

Features

SI7716ADN-T1-GE3 features: (1)Halogen-free; (2)TrenchFET® Gen III Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested.

Diagrams

SI7716ADN-T1-GE3 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI7716ADN-T1-GE3
SI7716ADN-T1-GE3
Vishay/Siliconix
MOSFET 30V 16A 27.7W 13.5mohm @ 10V
Data Sheet
0-1: $0.60
1-10: $0.47
10-100: $0.43
100-250: $0.37
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI7716ADN-T1-GE3
SI7716ADN-T1-GE3
Vishay/Siliconix
MOSFET 30V 16A 27.7W 13.5mohm @ 10V
Data Sheet
0-1: $0.60
1-10: $0.47
10-100: $0.43
100-250: $0.37
SI7726DN-T1-GE3
SI7726DN-T1-GE3
Vishay/Siliconix
MOSFET 30V 35A 52W 9.5mohm @ 10V
Data Sheet
0-1: $0.50
1-10: $0.40
10-100: $0.35
100-250: $0.31
SI7788DP-T1-GE3
SI7788DP-T1-GE3
Vishay/Siliconix
MOSFET 30V 50A 69W 3.1mohm @ 10V
Data Sheet
0-1: $1.96
1-10: $1.51
10-100: $1.36
100-250: $1.22
SI7738DP-T1-GE3
SI7738DP-T1-GE3
Vishay/Siliconix
MOSFET 150V 30A 96W 38mohm @ 10V
Data Sheet
0-1: $1.71
1-10: $1.31
10-100: $1.19
100-250: $1.07
Si7792DP-T1-GE3
Si7792DP-T1-GE3
Vishay/Siliconix
MOSFET 30 Volts 60 Amps 104 Watts
Data Sheet
0-1990: $0.59
1990-3000: $0.57
3000-6000: $0.54
6000-12000: $0.50
SI7758DP-T1-GE3
SI7758DP-T1-GE3
Vishay/Siliconix
MOSFET 30V 60A 104W 2.9mohm @ 10V
Data Sheet
0-2140: $0.54
2140-3000: $0.47