(Hong Kong)
Product Summary
The FDS6375_NL is a P-Channel 2.5V specified MOSFET. The FDS6375_NL is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 8V). Applications of the are power management, load switch, battery protection.
Parametrics
FDS6375_NL absolute maximum ratings: (1)VDSS Drain-Source Voltage: -20 V; (2)VGSS Gate-Source Voltage: ±8 V; (3)ID Drain Current - Continuous: 8 A; (4)Power Dissipation for Single Operation: 2.5 W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +175 ℃.
Features
FDS6375_NL features: (1)-8 A,-20 V. RDS(ON)= 24 mW @ VGS = -4.5 V RDS(ON)= 32 mW @ VGS = -2.5 V; (2)Low gate charge (26 nC typical); (3)High performance trench technology for extremely low RDS(ON); (4)High current and power handling capability.
Diagrams
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